A Strategic Review of Recent Progress in Metamorphic Quantum Well Based Heterostructure Electronic Devices

Recent expansion in the demand for high performance applications require high performance devices. It can be achieved by utilizing features of the quantum well based heterostructures on metamorphic buffer. Based on this metamorphic technique two electronic devices, named high electron mobility transistors (MHEMTs) & heterojunction bipolar transistors (MHBTs) are the areas of interest now-a-days. This paper reviews the remarkable progress being made in the development of InP based MHEMT & MHBT in the context of material properties, device structures, DC and RF performances for the development of low cost, high performance power amplifier (PA) and low noise amplifier (LNA) with high linearity applications.