Title :
A Strategic Review of Recent Progress in Metamorphic Quantum Well Based Heterostructure Electronic Devices
Author :
Mukhopadhyay, Partha ; Das, Palash ; Pathak, Saptarshi ; Kundu, Sudip ; Chang, Edward Y. ; Biswas, Dhrubes
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur
Abstract :
Recent expansion in the demand for high performance applications require high performance devices. It can be achieved by utilizing features of the quantum well based heterostructures on metamorphic buffer. Based on this metamorphic technique two electronic devices, named high electron mobility transistors (MHEMTs) & heterojunction bipolar transistors (MHBTs) are the areas of interest now-a-days. This paper reviews the remarkable progress being made in the development of InP based MHEMT & MHBT in the context of material properties, device structures, DC and RF performances for the development of low cost, high performance power amplifier (PA) and low noise amplifier (LNA) with high linearity applications.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; low noise amplifiers; microwave power amplifiers; power semiconductor devices; quantum well devices; reviews; InP; MHBT; MHEMT; heterojunction bipolar transistors; heterostructure electronic devices; high electron mobility transistors; low noise amplifier; metamorphic quantum well; power amplifier; HEMTs; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Low-noise amplifiers; MODFETs; Material properties; Radio frequency; Radiofrequency amplifiers; mHEMTs;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.151
