DocumentCode :
2739692
Title :
Measurement of Minority Carrier Lifetime in Hg1-xCdxTe Photodetector
Author :
Cui, H.Y. ; Li, Z.F. ; Xu, X.Y. ; Liu, Z.L. ; Quan, Z.J. ; Lu, W.
Author_Institution :
Chinese Acad. of Sci., Shanghai
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
325
Lastpage :
325
Abstract :
The transient photo-generated excess minority carrier lifetime in Hg1-xCdxTe n+p junction photodetector are measured using improved photo-induced open-circuit voltage decay (OCVD) technique. The lifetimes we extracted from the decay curve of the photovoltage are from tens to hundreds ns. A comparison of the relationship between composition of Cd and minority carrier lifetime show the lifetimes become longer with the increasing of Cd composition.
Keywords :
cadmium compounds; carrier lifetime; mercury compounds; photodetectors; HgCdTe; decay curve; minority carrier lifetime; photo-induced open-circuit voltage decay; photodetector; Charge carrier lifetime; Circuits; Frequency response; Infrared imaging; Lighting; Optical pulses; Photodetectors; Physics; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368533
Filename :
4222267
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2739692
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