• DocumentCode
    2739720
  • Title

    Characterization of Physical Defects and Fault Analysis of Molecular and Nanoscaled Integrated Circuits

  • Author

    Lyshevski, Sergey Edward

  • Author_Institution
    Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    514
  • Lastpage
    517
  • Abstract
    This paper reports a concept to design the defect-tolerant molecular integrated circuits (MICs). The results are applicable to conventional ICs which utilize solid-state devices. By enhancing photolithography and other CMOS processes, advancing materials and optimizing devices, some device and circuit performance were improved. Unfortunately, some key performance characteristics and capabilities were significantly degraded. The performance tradeoffs and effects of the equivalent cell size reduction are well known. The defects and faults at the device and circuit levels must be accommodated. It is illustrated that in general, the defects and faults can be accommodated.
  • Keywords
    CMOS integrated circuits; fault tolerance; integrated circuit design; integrated circuit reliability; molecular electronics; nanoelectronics; photolithography; CMOS process; defect-tolerant molecular integrated circuits; fault analysis; nanoscaled integrated circuits; photolithography; solid-state devices; Assembly; Circuit faults; Circuit optimization; Circuit synthesis; Hardware; Integrated circuit interconnections; Microelectronics; Microwave integrated circuits; Molecular electronics; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.154
  • Filename
    4617136