Title :
X-ray photoelectron diffraction study of hexagonal GaN(0001) thin films
Author :
Denecke, R. ; Morais, J. ; Liesegang, J. ; Fadley, C.S.
Author_Institution :
Div. of Mater. Sci., Lawrence Berkeley Lab., Berkeley, CA, USA
Abstract :
We report on the first scanned-angle X-ray photoelectron diffraction measurements on GaN(0001) in the wurtzite structure, as grown on sapphire substrates using LPCVD. These as-grown samples reveal forward scattering peaks in agreement with a theoretical calculation using a multiple scattering cluster calculation. From the combination of experiment and theoretical calculation and from a simple intensity ratio argument the surface polarity for these samples could be determined to be N. The surface contamination by O and C does not exhibit any clear structure. The data also indicate that C is on average closer to the GaN surface than O
Keywords :
CVD coatings; III-V semiconductors; X-ray photoelectron spectra; carbon; electron diffraction; gallium compounds; oxygen; semiconductor thin films; surface contamination; surface structure; wide band gap semiconductors; Al2O3; GaN:C,O; LPCVD; X-ray photoelectron diffraction; forward scattering peaks; hexagonal GaN(0001) thin films; intensity ratio; multiple scattering cluster calculation; sapphire substrates; scanned-angle X-ray photoelectron diffraction measurements; surface contamination; surface polarity; wurtzite structure; Gallium nitride; Light scattering; Physics; Pollution measurement; Substrates; Surface contamination; Surface morphology; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711622
