X-ray photoelectron diffraction study of hexagonal GaN(0001) thin films

Author

Denecke, R. ; Morais, J. ; Liesegang, J. ; Fadley, C.S.

Author_Institution

Div. of Mater. Sci., Lawrence Berkeley Lab., Berkeley, CA, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

223

Lastpage

226

Abstract

We report on the first scanned-angle X-ray photoelectron diffraction measurements on GaN(0001) in the wurtzite structure, as grown on sapphire substrates using LPCVD. These as-grown samples reveal forward scattering peaks in agreement with a theoretical calculation using a multiple scattering cluster calculation. From the combination of experiment and theoretical calculation and from a simple intensity ratio argument the surface polarity for these samples could be determined to be N. The surface contamination by O and C does not exhibit any clear structure. The data also indicate that C is on average closer to the GaN surface than O

Keywords

CVD coatings; III-V semiconductors; X-ray photoelectron spectra; carbon; electron diffraction; gallium compounds; oxygen; semiconductor thin films; surface contamination; surface structure; wide band gap semiconductors; Al₂O₃; GaN:C,O; LPCVD; X-ray photoelectron diffraction; forward scattering peaks; hexagonal GaN(0001) thin films; intensity ratio; multiple scattering cluster calculation; sapphire substrates; scanned-angle X-ray photoelectron diffraction measurements; surface contamination; surface polarity; wurtzite structure; Gallium nitride; Light scattering; Physics; Pollution measurement; Substrates; Surface contamination; Surface morphology; Transistors; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711622

Filename

711622