DocumentCode :
2739737
Title :
Design of RTD-Based NMIN/NMAX Gates
Author :
Nùñez, Juan ; Quintana, José M. ; Avedillo, María J.
Author_Institution :
IMSE-CNM-CSIC, Univ. de Sevilla, Sevilla
fYear :
2008
fDate :
18-21 Aug. 2008
Firstpage :
518
Lastpage :
521
Abstract :
A novel implementation of NMIN/NMAX gates based on RTDs and transistors is presented. In this paper we will derive the relations that circuit representative parameters must verify to obtain a correct behaviour by means of the principles of the Monostable-to-Multistable Logic (MML). HSPICE simulations will be used to check our theoretical results.
Keywords :
SPICE; insulated gate bipolar transistors; multivalued logic circuits; nanotechnology; resonant tunnelling diodes; HSPICE simulation; RTD-based NMIN/NMAX gates; monostable-to-multistable logic; resonant tunnelling diodes; transistors; Diodes; Driver circuits; Frequency; HEMTs; Logic circuits; MODFETs; Multivalued logic; Signal processing; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
Type :
conf
DOI :
10.1109/NANO.2008.155
Filename :
4617137
Link To Document :
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