Title :
TID, SEE and radiation induced failures in advanced flash memories
Author :
Nguyen, D.N. ; Scheick, L.Z.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We report on TID and SEE tests of multi-level and higher density flash memories. Standby currents and functionality tests were used to characterize the response of radiation induced failures. The radiation-induced failures can be categorized as following: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.
Keywords :
error analysis; flash memories; integrated circuit reliability; integrated circuit testing; integrated memory circuits; radiation effects; SEE tests; SEU read errors; TID testing; advanced flash memories; erase failures; functionality tests; irradiation; multilevel flash memory; multiple upsets; radiation induced failures; single-event latch up; standby currents; stuck-bit read errors verified post-irradiation; write errors; Circuits; Electrons; Flash memory; Laboratories; Nonvolatile memory; Propulsion; Space missions; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN :
0-7803-8127-0
DOI :
10.1109/REDW.2003.1281316
