Title :
Energy gap bowing and refractive index spectrum of AlInN and AlGaInN
Author :
Piprek, J. ; Peng, T. ; Qui, G. ; Olowolafe, J.O.
Author_Institution :
Coll. of Eng., Delaware Univ., Newark, DE, USA
Abstract :
High-quality polycrystalline AlInN films are deposited by low-temperature magnetron reactive sputtering. The energy band gap is measured across the entire compositional range and strong band gap bowing is observed. Within the transparency wavelength region, the effect of AlInN composition on the refractive index spectrum is strongest at shorter wavelength. Taking these measurements into account, non-linear interpolation formulas are employed to predict band gap and refractive index of quaternary AlGaInN for arbitrary compositions
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; optical constants; refractive index; semiconductor thin films; sputtered coatings; stoichiometry; wide band gap semiconductors; AlGaInN; AlInN; AlInN composition; band gap bowing; energy band gap; energy gap bowing; high-quality polycrystalline AlInN films; low-temperature magnetron reactive sputtering; nonlinear interpolation formulas; refractive index spectrum; transparency wavelength region; Crystallization; Energy measurement; Interpolation; Lattices; Magnetic separation; Optical films; Photonic band gap; Refractive index; Sputtering; Wavelength measurement;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711623
