• DocumentCode
    2739788
  • Title

    Photoresist Removal Requirements for Advanced Wafer Level Packaging Technology

  • Author

    Yamamoto, Yasuhisa

  • Author_Institution
    DuPont Electron. Center, DuPont Electron. Technol., Kawasaki, Japan
  • fYear
    2008
  • fDate
    22-24 Oct. 2008
  • Firstpage
    243
  • Lastpage
    245
  • Abstract
    It has been several years since wafer level packaging (WLP) technology has emerged, enabling the packaging industry to successfully fabricate smaller, more reliable modules. The use of this technology is expected to continue to grow in the future. One current WLP trend is to replace high lead solder bumps with lead-free solder bumps. Two of the more promising lead-free bumps are Cu-pillars and bumps. The use of the Cu-pillar/bump approach continues to increase as fabricators drive to increase yields, create more I/O pins per wafer thus resulting in finer bump pitch. The use of liquid photoresist (PR) and/or dry film photoresist (DFR) has become the standard for fine bump pitch formation. The major challenges in using these resists are 1) the effective removal of the resist without residue or redeposit; and 2) the compatibility of the removal chemistry with under bump materials (UBM). This paper will discuss WLP market trends, the technical requirements associated with PR/DFR removal, and conclude with some experimental results of advanced PR/DFR removal.
  • Keywords
    photoresists; soldering; wafer level packaging; dry film photoresist; high lead solder bumps; lead-free solder bumps; liquid photoresist; photoresist removal requirements; wafer level packaging technology; CMOS technology; Consumer electronics; Costs; Environmentally friendly manufacturing techniques; Lead; Packaging; Pins; Polyimides; Resists; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-3623-1
  • Electronic_ISBN
    978-1-4244-3624-8
  • Type

    conf

  • DOI
    10.1109/IMPACT.2008.4783855
  • Filename
    4783855