Title :
InP Nanowire Diodes on Quartz Substrates
Author :
Mathai, Sagi ; Kobayashi, Nobuhiko P. ; Li, Xuema ; Straznicky, Joseph ; Wang, Shih-Yuan ; Tan, Michael R T ; Houng, Denny ; Williams, R.Stanley
Author_Institution :
Inf. & Quantum Syst. Lab. at Hewlett-Packard Labs., Palo Alto, CA
Abstract :
We demonstrate, for the first time, a unique p-i-n diode structure composed of ensembles of unintentionally doped InP nanowires bridging p-type and n-type hydrogenated microcrystalline silicon (muc-Si:H) layers on a quartz substrate. Selective area growth was used to restrict nanowires to the perimeter of a circular hole etched into vertically stacked p+ muc-Si:H/SiO2/n+ muc-Si:H thin films. DC electrical measurements confirm diode current-voltage characteristics with 25 nA reverse leakage current and an ideality factor of 3.9. Our demonstration suggests that active devices incorporating III-V compound semiconductor nanowires can be integrated onto low cost non- single crystal material platforms.
Keywords :
III-V semiconductors; indium compounds; leakage currents; nanowires; p-i-n diodes; DC electrical measurements; III-V compound semiconductor; InP; SiO2; hydrogenated microcrystalline silicon; nanowire diodes; p-i-n diode structure; quartz substrates; reverse leakage current; selective area growth; thin films; Current measurement; Electric variables measurement; Etching; III-V semiconductor materials; Indium phosphide; P-i-n diodes; Semiconductor diodes; Semiconductor thin films; Silicon; Substrates;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.160
