InP Nanowire Diodes on Quartz Substrates

Author

Mathai, Sagi ; Kobayashi, Nobuhiko P. ; Li, Xuema ; Straznicky, Joseph ; Wang, Shih-Yuan ; Tan, Michael R T ; Houng, Denny ; Williams, R.Stanley

Author_Institution

Inf. & Quantum Syst. Lab. at Hewlett-Packard Labs., Palo Alto, CA

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

538

Lastpage

540

Abstract

We demonstrate, for the first time, a unique p-i-n diode structure composed of ensembles of unintentionally doped InP nanowires bridging p-type and n-type hydrogenated microcrystalline silicon (muc-Si:H) layers on a quartz substrate. Selective area growth was used to restrict nanowires to the perimeter of a circular hole etched into vertically stacked p+ muc-Si:H/SiO₂/n+ muc-Si:H thin films. DC electrical measurements confirm diode current-voltage characteristics with 25 nA reverse leakage current and an ideality factor of 3.9. Our demonstration suggests that active devices incorporating III-V compound semiconductor nanowires can be integrated onto low cost non- single crystal material platforms.

Keywords

III-V semiconductors; indium compounds; leakage currents; nanowires; p-i-n diodes; DC electrical measurements; III-V compound semiconductor; InP; SiO₂; hydrogenated microcrystalline silicon; nanowire diodes; p-i-n diode structure; quartz substrates; reverse leakage current; selective area growth; thin films; Current measurement; Electric variables measurement; Etching; III-V semiconductor materials; Indium phosphide; P-i-n diodes; Semiconductor diodes; Semiconductor thin films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, TX

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.160

Filename

4617142