Title :
Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
Author :
Dupuis, R.D. ; Grudowski, P.A. ; Eiting, C.J. ; Shmagin, I.C. ; Kolbas, R.M. ; Rosner, S.J.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
We describe the optical and structural properties of InGaN multiple-quantum-well (MQW) heterostructures grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. These structures consist of InxGa1-xN quantum wells and InyGa1-yN barrier layers with GaN or AlGaN cladding layers. A comparison of the 300 K photoluminescence spectra of these samples indicates that the emission from the quantum well structure is not strongly affected by the high-temperature overlayer growth of GaN or AlGaN films. X-ray diffraction scans show superlattice peaks and indicate that the MQWs are fully strained
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; interface structure; internal stresses; photoluminescence; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; wide band gap semiconductors; (0001) sapphire substrates; 300 K; AlGaN; AlGaN cladding layers; GaN; GaN cladding layers; InxGa1-xN quantum wells; InyGa1-yN barrier layers; InGaN; InGaN quantum-well heterostructures; MQW; X-ray diffraction scans; fully strained superlattice; high-temperature overlayer growth; metalorganic chemical vapor deposition; multiple-quantum-well; optical characterization; photoluminescence spectra; structural characterization; Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; Optical films; Optical superlattices; Quantum well devices; Quantum wells; Substrates; Temperature; X-ray diffraction;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711624
