DocumentCode :
2739966
Title :
Synthesis and Field Emission Characteristics of Ga2O3 Nanorods with Ultra-Sharp Tips
Author :
Bayam, Yavuz ; VJ, Logeeswaran ; Katzenmeyer, Aaron M. ; Chacon, Rebecca J. ; Wong, Michael C. ; Hunt, Charles E. ; Islam, M. Saif
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Davis, Davis, CA
fYear :
2008
fDate :
18-21 Aug. 2008
Firstpage :
573
Lastpage :
575
Abstract :
We successfully synthesized beta-Ga2O3 nanorods with ultra-sharp tips without use of a catalyst. The nanorods were produced by heating a GaAs wafer in a CVD chamber. The morphology and structure of the nanorods were characterized by scanning electron microscopy(SEM), Energy Dispersive X-ray Spectroscopy (EDS) and Raman-Scattering Spectroscopy. The field emission characteristics demonstrated a turn-on field of about 2.1 V mum-1 and the threshold electric field of 5.6 V mum-1.
Keywords :
Raman spectra; X-ray chemical analysis; field emission; gallium compounds; nanostructured materials; scanning electron microscopy; CVD chamber; Ga2O3; Raman scattering spectroscopy; catalyst; energy dispersive X-ray spectroscopy; field emission; nanorods; scanning electron microscopy; wafer heating; Dispersion; Furnaces; Gallium arsenide; Heating; Nanostructures; Raman scattering; Scanning electron microscopy; Spectroscopy; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
Type :
conf
DOI :
10.1109/NANO.2008.169
Filename :
4617151
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2739966
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