• DocumentCode
    2740022
  • Title

    Tuning the Polarity of Si-Nanowire Transistors Without the Use of Doping

  • Author

    Weber, Walter M. ; Geelhaar, Lutz ; Lamagna, Luca ; Fanciulli, Marco ; Kreupl, Franz ; Unger, Eugen ; Riechert, Henning ; Scarpa, Giuseppe ; Lugli, Paolo

  • Author_Institution
    Namlab gGmbH & Qimonda Dresden GmbH & Co. OHG, Dresden
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    580
  • Lastpage
    581
  • Abstract
    In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts.
  • Keywords
    Schottky gate field effect transistors; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum wires; silicon; FET; Schottky contacts; Si; Si-undoped nanowire transistor; electrostatic control; geometry; polarity; source-drain contact; Charge carrier processes; Dielectric measurements; Doping; Electrostatics; Energy measurement; FETs; Logic; Nanoelectronics; Schottky barriers; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.171
  • Filename
    4617153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2740022