Title :
Radiation Hard Silicon Nanowire Field Effect Transistors
Author :
Tsakalakos, L. ; Losee, P. ; Balch, J. ; Bogorad, A.L. ; Taft, W.J. ; Likar, J.J. ; Herschitz, R.
Author_Institution :
Gen. Electr. Global Res. Center, Niskayuna, NY
Abstract :
Silicon nanowire-based transistors were fabricated and tested for their radiation hardness by exposure to Co60 X-ray radiation at doses ranging from 50-250 kRad. Minor degradation of the transistor characteristics was observed at 250 kRad. Our results show the inherent radiation hardness of nanowire devices.
Keywords :
X-ray effects; elemental semiconductors; insulated gate field effect transistors; nanowires; radiation hardening (electronics); semiconductor quantum wires; silicon; Si; X-ray radiation; degradation; field effect transistors; radiation absorbed dose 50 krad to 250 krad; radiation hardness; silicon nanowire; Degradation; Dielectric devices; FETs; Gold; Nanoscale devices; Semiconductor devices; Silicon; Space technology; System testing; Threshold voltage;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.172
