Title :
Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells
Author :
Zeng, K.C. ; Smith, M. ; Lin, J.Y. ; Jiang, H.X. ; Salvador, A. ; Popovici, G. ; Tang, H. ; Kim, W. ; Morkoc, H. ; Khan, M.A.
Author_Institution :
Dept. of Phys., Kansas State Univ., Manhattan, KS, USA
Abstract :
Fundamental optical transitions in GaN and InGaN epilayers, InGaN/GaN and GaN/AlGaN multiple quantum wells (MQWs) grown both by metal-organic chemical vapor deposition and reactive molecular beam epitaxy have been studied by picosecond time-resolved photoluminescence spectroscopy. The exciton binding energies and radiative recombination lifetimes of the free excitons and bound excitons have been obtained. Effects of well thickness on the optical properties of InxGa 1-xN/GaN and GaN/AlxGa1-xN MQWs have also been studied
Keywords :
III-V semiconductors; binding energy; excitons; interface states; molecular beam epitaxial growth; photoluminescence; radiative lifetimes; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; time resolved spectra; vapour phase epitaxial growth; wide band gap semiconductors; GaN; GaN-AlGaN; GaN/AlxGa1-xN MQWs; GaN/AlGaN multiple quantum wells; III-nitride epilayers; InxGa1-xN/GaN MQWs; InGaN; InGaN epilayers; InGaN-GaN; InGaN/GaN MQW; bound excitons; dynamic processes; exciton binding energies; free excitons; fundamental optical transitions; metal-organic chemical vapor deposition; multiple quantum wells; optical properties; optical transitions; picosecond time-resolved photoluminescence spectroscopy; radiative recombination lifetimes; reactive molecular beam epitaxy; well thickness; Aluminum gallium nitride; Chemical vapor deposition; Excitons; Gallium nitride; MOCVD; Molecular beam epitaxial growth; Optical buffering; Optical materials; Quantum computing; Quantum well devices;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711625
