Title :
SEE sensitivity trends in non-hardened high density SRAMs with sub-micron feature sizes
Author :
George, J. ; Koga, R. ; Crawford, K. ; Yu, P. ; Crain, S. ; Tran, V.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other effects such as stuck bits.
Keywords :
SRAM chips; proton effects; sensitivity analysis; SEE sensitivity; heavy ions irradiation; high density SRAM; level energy transfer; nonhardened SRAM; protons irradiation; sensitivity trends; single event effects; single event latchup; single event upsets; static random access memories; submicron feature sizes; Aerospace testing; CMOS technology; Cyclotrons; Energy exchange; Manufacturing; Protons; Random access memory; SRAM chips; Single event upset; Switches;
Conference_Titel :
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN :
0-7803-8127-0
DOI :
10.1109/REDW.2003.1281350
