DocumentCode
2740402
Title
Semiconductor terahertz oscillators and nonlinear dynamics
Author
Cao, J.C.
Author_Institution
Chinese Acad. of Sci., Shanghai
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
368
Lastpage
368
Abstract
We study the negative differential resistance in negative-effective-mass (NEM) semiconductors. The NEM diodes based on the NDR mechanisms have a self-oscillating frequency in the terahertz range. We have investigated the electric domain dynamics in the diodes under dc electric field, and nonlinear dynamics driven by dc+ac voltages.
Keywords
negative resistance devices; nonlinear dynamical systems; submillimetre wave diodes; submillimetre wave oscillators; NDR mechanisms; NEM diodes; electric domain dynamics; negative differential resistance; negative-effective-mass semiconductors; nonlinear dynamics; self-oscillating frequency; semiconductor terahertz oscillators; Chaos; Current density; Frequency; Laser theory; Optical imaging; Oscillators; Semiconductor diodes; Semiconductor lasers; Submillimeter wave technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368576
Filename
4222310
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