• DocumentCode
    2740416
  • Title

    Single-event effects test results of 512MB SDRAMs

  • Author

    Langley, T. ; Koga, R. ; Morris, T.

  • Author_Institution
    SEAKR Eng. Inc., Centennial, CO, USA
  • fYear
    2003
  • fDate
    21-25 July 2003
  • Firstpage
    98
  • Lastpage
    101
  • Abstract
    Single-event effect test results of new 512MB SDRAMs are reported in this paper. Effects characterized during testing include single-event upset, single-event latchup, and single-event functional interrupt. Upset cross-sections are compared with radiation test results of earlier generation SDRAMs as a feasibility assessment for use of these new technologies.
  • Keywords
    DRAM chips; integrated circuit testing; radiation effects; 512 MB; SDRAM; SEE test results; feasibility assessment; radiation test results; single-event effects; single-event functional interrupt; single-event latchup; single-event upset; synchronous dynamic random access memory; upset cross-sections; Aerospace testing; Cyclotrons; Performance evaluation; Protons; Radiation effects; SDRAM; Single event upset; Space technology; System testing; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2003. IEEE
  • Print_ISBN
    0-7803-8127-0
  • Type

    conf

  • DOI
    10.1109/REDW.2003.1281355
  • Filename
    1281355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2740416