Title :
Detailed Study of Differently Grown InN Wavers as Strong THz Surface Emitters Excited at 800 nm and 1060 nm
Author :
Matthaeus, G. ; Pradarutti, B. ; Briickner, C. ; Riehemann, Stefan ; Notni, Gunther ; Nolte, Stefan ; Cimalla, Volker ; Lebedev, Vadim ; Ambacher, Oliver ; Tiinnermann, A.
Author_Institution :
Friedrich-Schiller-Univ., Jena
Abstract :
A detailed study of differently MBE grown InN wavers as THz surface emitters is reported. The samples were irritated with fs laser pulses at 800 nm and 1060 nm.
Keywords :
III-V semiconductors; electron mobility; indium compounds; molecular beam epitaxial growth; wide band gap semiconductors; InN; differently grown wavers; molecular beam epitaxy; terahertz surface emitter; wavelength 1060 nm; wavelength 800 nm; Brillouin scattering; Electron emission; Electron mobility; Fiber lasers; Molecular beam epitaxial growth; Optical pulses; Physics; Surface emitting lasers; Surface waves; Wavelength measurement;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368577
