DocumentCode :
2740487
Title :
Catastrophic SEE in high-voltage power MOSFETs
Author :
Selva, L.E. ; Scheick, L.Z. ; McClure, S. ; Miyahira, T. ; Guertin, S.M. ; Shah, S.K. ; Edmonds, L.D. ; Patterson, D.
fYear :
2003
fDate :
21-25 July 2003
Firstpage :
113
Lastpage :
120
Abstract :
Heavy ion irradiation of high-voltage power MOSFETs with long-range ions (>123μm in silicon) was performed using 14, 19, 22, 24, 28, and 39 MeV-cm2/mg ions at normal incidence. Prior to catastrophic failure some DUTs exhibited unusual electrical characteristic: all devices demonstrated high current transients (or current spikes) at voltages significantly lower than the voltage at which the devices failed.
Keywords :
ion beam effects; power MOSFET; catastrophic SEE; catastrophic failure; current spikes; device failure; electrical characteristics; heavy ion irradiation; high current transients; high-voltage power MOSFET; power field effects transistor; radiation testing; single event effect; space missions; Doping; Laboratories; MOSFETs; NASA; Power engineering and energy; Propulsion; Space technology; Telephony; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2003. IEEE
Print_ISBN :
0-7803-8127-0
Type :
conf
DOI :
10.1109/REDW.2003.1281360
Filename :
1281360
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2740487
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