Hydrogenation of trap layer as an SOI process step

Author

Usenko, A.Y. ; Carr, W.N.

Author_Institution

Silicon Wafer Technol. Inc., Newark, NJ, USA

fYear

2000

fDate

2000

Firstpage

16

Lastpage

17

Abstract

A process for creating a hydrogen rich buried layer to be further used as a part of SOI wafer fabrication is presented. We form a trap layer and then fill it with hydrogen. A buried amorphized layer is used as the trap. The amorphization is performed with silicon self-implantation at low temperature. Electrolytic charging is used as the hydrogen filling technique. The layers obtained contain enough hydrogen to cause blistering of the silicon wafer surface

Keywords

amorphisation; buried layers; electrolysis; hydrogenation; integrated circuit technology; ion implantation; semiconductor technology; silicon-on-insulator; surface structure; SOI process step; SOI wafer fabrication; Si-SiO₂; Si:H; amorphization; buried amorphized layer; electrolytic charging; hydrogen filling technique; hydrogen rich buried layer; hydrogenation; silicon self-implantation; silicon wafer surface blistering; trap layer; trap layer formation; Annealing; Atomic layer deposition; Cathodes; Costs; Fabrication; Hydrogen; Plasma immersion ion implantation; Plasma temperature; Silicon; Surface charging;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2000 IEEE International

Conference_Location

Wakefield, MA

ISSN

1078-621X

Print_ISBN

0-7803-6389-2

Type

conf

DOI

10.1109/SOI.2000.892747

Filename

892747