Title :
Hydrogenation of trap layer as an SOI process step
Author :
Usenko, A.Y. ; Carr, W.N.
Author_Institution :
Silicon Wafer Technol. Inc., Newark, NJ, USA
Abstract :
A process for creating a hydrogen rich buried layer to be further used as a part of SOI wafer fabrication is presented. We form a trap layer and then fill it with hydrogen. A buried amorphized layer is used as the trap. The amorphization is performed with silicon self-implantation at low temperature. Electrolytic charging is used as the hydrogen filling technique. The layers obtained contain enough hydrogen to cause blistering of the silicon wafer surface
Keywords :
amorphisation; buried layers; electrolysis; hydrogenation; integrated circuit technology; ion implantation; semiconductor technology; silicon-on-insulator; surface structure; SOI process step; SOI wafer fabrication; Si-SiO2; Si:H; amorphization; buried amorphized layer; electrolytic charging; hydrogen filling technique; hydrogen rich buried layer; hydrogenation; silicon self-implantation; silicon wafer surface blistering; trap layer; trap layer formation; Annealing; Atomic layer deposition; Cathodes; Costs; Fabrication; Hydrogen; Plasma immersion ion implantation; Plasma temperature; Silicon; Surface charging;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892747
