Study the effects of proton irradiation on GaAs/Ge solar cells

Author

Elfiky, Dalia ; Yamaguchi, Masafumi ; Sasaki, Takuo ; Takamoto, Tatsuya ; Morioka, Chiharu ; Imaizumi, Mitsuru ; Ohshima, Takeshi ; Sato, Shin-ichiro ; Elnawawy, Mohamed ; Eldesuky, Tarek ; Ghitas, Ahmed

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

2010

fDate

20-25 June 2010

Abstract

Proton energy dependence of radiation damage to GaAs/Ge solar cells irradiated by protons with various energies (50 keV, 200 keV, 1 MeV and 9.5 MeV) were analyzed by using PC1D simulation together with SRIM simulations to investigate their electrical properties. The degradation of the open-circuit voltage is highest for 50 keV irradiation and lowest for 9.5 MeV irradiation. According to SRIM simulations the above changes in electrical properties are mainly related to damage in different regions of the solar cells.

Keywords

III-V semiconductors; elemental semiconductors; solar cells; PC1D simulation; SRIM simulations; electron volt energy 1 MeV; electron volt energy 200 keV; electron volt energy 50 keV; electron volt energy 9.5 MeV; proton energy dependence; proton irradiation; solar cells; Analytical models; Degradation; Gallium arsenide; Photovoltaic cells; Protons; Radiation effects; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5614633

Filename

5614633