Title :
Room Temperature Low-Threshold Mid-Infrared Quantum Cascade Lasers
Author :
Li, A.Z. ; Lin, C. ; Li, H. ; Xu, G.Y. ; Zhang, Y.G. ; Wei, L. ; Li, C.C. ; Hu, J.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
We report room temperature low current density of InP-based AlInAs/InGaAs quantum cascade laser (QCL). For a 7.66-mum QCL, the threshold current density of 1.7 kA/cm2 at 300 K, pulsed output power of 800 mW at 80 K, and continuous-wave (CW) output power of 13 mW at 135 K are achieved. An 8.91-mum QCL comprised 100 stage active region operating up to 320 K in pulsed mode also presented.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum cascade lasers; AlInAs-InGaAs-InP; continuous-wave output power; low-threshold mid-infrared quantum cascade lasers; power 13 mW; power 800 mW; pulsed mode; pulsed output power; room temperature operation; temperature 135 K; temperature 300 K; temperature 80 K; threshold current density; wavelength 7.66 micron; wavelength 8.91 micron; Fabry-Perot; Gas lasers; Indium gallium arsenide; Indium phosphide; Optical waveguides; Power generation; Quantum cascade lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368599
