Single-Electron Transistor-Tunable Tunnel Barrier Based Non-Volatile Memory

We propose a novel memory configuration using tunable barrier and estimate its frequency response to engineer ever fast and robust nonvolatile memory devices. A quantum-classical approach proves that the lifetime of the charge stored on the semiconductor quantum dot is considerably higher when compared to the normal floating gate non-volatile memories, and the design also promises very high immunity towards thermal noise. A brief workout presented enables the design of the memory element by subtly modifying an existing single electron transistor design.