Title :
Design guideline and performance prediction of `SBB´ SOI MOSFETs
Author :
Funakoshi, Shichio ; Terauchi, Mamoru ; Terada, Kazuo
Author_Institution :
Dept. of Comput. Eng., Hiroshima City Univ., Japan
Abstract :
Characteristics of `self-body-biased´ (`SBB´) SOI MOSFETs (Terauchi and Terada, 1999) have been studied in detail. Static simulations show that both the desired off-state leakage current (Ioff) and the on-state current (Ion) ratio (Ion/Ioff) can be achieved by independently changing the impurity concentration of the `high Na´ and the `low Na´ regions of `SBB´ SOI MOSFETs. Transient simulations reveal that an inverter made of `SBB´ CMOS devices has up to 30% shorter propagation delay (τpd) at a supply voltage of 0.9 V than that for a bulk CMOS inverter under a relatively heavy load condition (load capacitance of 1 pF)
Keywords :
CMOS integrated circuits; MOSFET; delays; logic gates; semiconductor device models; silicon-on-insulator; transient analysis; 0.9 V; 1 pF; SBB CMOS devices; SBB SOI MOSFETs; Si-SiO2; bulk CMOS inverter; design guideline; high Na region; impurity concentration; inverter; load condition; low Na region; off-state leakage current; on-state current; on/off state current ratio; performance prediction; propagation delay; self-body-biased SOI MOSFETs; static simulations; supply voltage; transient simulations; Capacitance; Circuit simulation; Guidelines; Impurities; Inverters; Leakage current; MOSFETs; Medical simulation; Propagation delay; Threshold voltage;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892765
