• DocumentCode
    2740969
  • Title

    850 V DMOS-switch in silicon on-insulator with specific Ron of 13 Ω-mm2

  • Author

    Zingg, Rent P. ; Weijland, Inesz ; van Zwol, Hans ; Boos, Priscilla ; Lavrijsen, Theo ; Schoenmakers, Theo

  • Author_Institution
    Consumer Syst., Philips Semicond. BV, Nijmegen, Netherlands
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    A 13 mask, double metal process is presented for high-voltage applications. Double RESURF in the silicon-on-insulator layer permits realization of 850 V devices on less than half the surface area of corresponding devices in bulk silicon
  • Keywords
    MOS integrated circuits; field effect transistor switches; power integrated circuits; power semiconductor switches; silicon-on-insulator; 850 V; DMOS-switch; Si surface area; Si-SiO2; bulk silicon devices; double RESURF; double metal process; high-voltage applications; power devices; silicon on-insulator; silicon-on-insulator layer; specific on-resistance; Circuits; Gallium arsenide; Impact ionization; Insulation; Logic devices; Photonic band gap; Power conversion; Semiconductor materials; Silicon carbide; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2000 IEEE International
  • Conference_Location
    Wakefield, MA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6389-2
  • Type

    conf

  • DOI
    10.1109/SOI.2000.892770
  • Filename
    892770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2740969