Title :
850 V DMOS-switch in silicon on-insulator with specific Ron of 13 Ω-mm2
Author :
Zingg, Rent P. ; Weijland, Inesz ; van Zwol, Hans ; Boos, Priscilla ; Lavrijsen, Theo ; Schoenmakers, Theo
Author_Institution :
Consumer Syst., Philips Semicond. BV, Nijmegen, Netherlands
Abstract :
A 13 mask, double metal process is presented for high-voltage applications. Double RESURF in the silicon-on-insulator layer permits realization of 850 V devices on less than half the surface area of corresponding devices in bulk silicon
Keywords :
MOS integrated circuits; field effect transistor switches; power integrated circuits; power semiconductor switches; silicon-on-insulator; 850 V; DMOS-switch; Si surface area; Si-SiO2; bulk silicon devices; double RESURF; double metal process; high-voltage applications; power devices; silicon on-insulator; silicon-on-insulator layer; specific on-resistance; Circuits; Gallium arsenide; Impact ionization; Insulation; Logic devices; Photonic band gap; Power conversion; Semiconductor materials; Silicon carbide; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892770
