High performance 0.1 μm partially depleted SOI CMOSFET

The partially depleted SOI MOSFET (PD-SOI) has been found to be an attractive device due to advantages such as full dielectric isolation and reduced junction capacitance compared to the bulk Si device (Assaderaghi et al, 1997; Maeda et al, 2000). However, the floating body effect occurs on PD-SOI devices, resulting in threshold voltage reduction and noise overshoot (Tseng et al, 1997). Body contact structures have been proposed to improve the floating body effect (Huang et al, 1998). This paper describes high performance 0.1 μm generation SOI MOSFET technology with body contact structure (BC-SOI) which was used to investigate the device characteristics as well as thermal effects in comparison with the floating body SOI MOSFET (FB-SOI), which is without body contact. The dynamic-threshold voltage SOI MOSFET (DTMOS) was also investigated