Monolayer scale analysis of ZnSe/GaAs heterointerface structures by X-ray CTR scattering and interference

Author

Takeda, Y. ; Fujita, K. ; Tabuchi, M. ; Funato, M. ; Aoki, S. ; Fujita, Sz. ; Fujita, Sg.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan

fYear

1997

fDate

8-11 Sep 1997

Firstpage

263

Lastpage

266

Abstract

By X-ray CTR (crystal truncation rod) scattering and X-ray interference in ZnSe/GaAs heterostructures, Zn, Se, Ga and As distributions and crystal structures near the heterointerfaces were analyzed to the one monolayer level non-destructively. In Zn-initiated growth of ZnSe, several monolayers depth of interdiffusion of Ga/Zn and abrupt change of As and Se were observed. In Se-initiated growth, the distribution of Ga-vacancies was observed, which means Ga₂Se ₃ formation near the interface

Keywords

II-VI semiconductors; III-V semiconductors; X-ray scattering; chemical interdiffusion; crystal structure; gallium arsenide; semiconductor heterojunctions; vacancies (crystal); zinc compounds; Ga-vacancy; X-ray crystal truncation rod scattering; X-ray interference; ZnSe-GaAs; crystal structure; heterostructures; interdiffusion; monolayer scale analysis; Atomic layer deposition; Atomic measurements; Gallium arsenide; Interference; Lattices; Materials science and technology; Substrates; Wavelength measurement; X-ray scattering; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711631

Filename

711631