Title :
Monolayer scale analysis of ZnSe/GaAs heterointerface structures by X-ray CTR scattering and interference
Author :
Takeda, Y. ; Fujita, K. ; Tabuchi, M. ; Funato, M. ; Aoki, S. ; Fujita, Sz. ; Fujita, Sg.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan
Abstract :
By X-ray CTR (crystal truncation rod) scattering and X-ray interference in ZnSe/GaAs heterostructures, Zn, Se, Ga and As distributions and crystal structures near the heterointerfaces were analyzed to the one monolayer level non-destructively. In Zn-initiated growth of ZnSe, several monolayers depth of interdiffusion of Ga/Zn and abrupt change of As and Se were observed. In Se-initiated growth, the distribution of Ga-vacancies was observed, which means Ga2Se 3 formation near the interface
Keywords :
II-VI semiconductors; III-V semiconductors; X-ray scattering; chemical interdiffusion; crystal structure; gallium arsenide; semiconductor heterojunctions; vacancies (crystal); zinc compounds; Ga-vacancy; X-ray crystal truncation rod scattering; X-ray interference; ZnSe-GaAs; crystal structure; heterostructures; interdiffusion; monolayer scale analysis; Atomic layer deposition; Atomic measurements; Gallium arsenide; Interference; Lattices; Materials science and technology; Substrates; Wavelength measurement; X-ray scattering; Zinc compounds;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711631
