Title :
Improving Electrical Properties of ZnO Thin Films by the Combination of Plasma Treatment, Post-Annealing and Doping
Author :
Shie, Tsai-Yuan ; Lin, Ching-Fuh
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
Abstract :
The effect of Ar plasma and post-annealing on the electrical properties of undoped and Al-doped ZnO films deposited on glass substrates using the sol-gel spin-coating technique are investigated. The surface morphology of ZnO thin films shows that the grain boundaries of ZnO grains become indistinct after plasma treatment. With the appropriate processing sequence, the resistivity of ZnO thin films decreases significantly to the order of 10-3.
Keywords :
II-VI semiconductors; aluminium; annealing; doping; electrical resistivity; grain boundaries; plasma materials processing; semiconductor thin films; sol-gel processing; spin coating; surface morphology; wide band gap semiconductors; zinc compounds; ZnO:Al; aluminium doping; electrical property; electrical resistivity; glass substrates; grain boundary; plasma treatment; post-annealing; sol-gel spin-coating; surface morphology; zinc oxide thin films; Argon; Doping; Glass; Grain boundaries; Plasma materials processing; Plasma properties; Surface morphology; Surface treatment; Transistors; Zinc oxide;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.226
