Title :
Ballistic electron transport in semiconductor superlattices
Author :
Strasser, G. ; Rauch, C. ; Kempa, K. ; Gornik, E.
Author_Institution :
Dept. of Solid State. Electron., Tech. Univ. Wien, Austria
Abstract :
An investigation of the electric field dependent transport through superlattice and multiple superlattice minibands is presented. A decrease of the miniband transmission with increasing electric field is observed in agreement with the results of a calculation based on a transfer matrix method. This observed behavior gives direct evidence for coherent transport through an undoped and biased GaAs/AlGaAs superlattice. The transconductance in `broken gap´ superlattices is used to probe interminiband transition rates above and below the optical phonon frequency
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; semiconductor superlattices; GaAs-AlGaAs; ballistic electron transport; coherent transport; miniband transmission; multiple superlattice minibands; optical phonon frequency; semiconductor superlattices; transconductance; transfer matrix method; Current measurement; Educational institutions; Electron beams; Gallium arsenide; Laser sintering; Physics; Probes; Quantum mechanics; Semiconductor superlattices; Solid state circuits;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711632
