Title :
Progress of IV-VI Semiconductor Research in China
Author :
Wu, Huizhen ; Si, Jianxiao ; Xu, Tianning ; Cao, Chunfang
Author_Institution :
Zhejiang Univ., Hangzhou
Abstract :
Progress of IV-VI semiconductor (lead chalcogenides) research in China is reported. Lead chalcogenides (PbSe and PbTe) have been grown by molecular beam epitaxy (MBE). Evolution of PbSe surface morphologies with different Se/PbSe beam flux ratio has been studied by atomic force microscopy (AFM) and high-resolution x-ray diffraction (HRXRD). Interesting surface features, such as triangle holes and spirals with monolayer steps, are observed by AFM. Glide of threading dislocations in < 110> {100} -glide system and Pb-rich atom agglomeration play an important role in the formation of triangle pits. PbSe QDs grown by self-organization and mid-infrared luminescent emission of the QDs at room temperature are demonstrated. Phonon modes of PbTe and PbSe epitaxial film are studied by Raman spectroscopy in detail.
Keywords :
IV-VI semiconductors; Raman spectra; X-ray diffraction; atomic force microscopy; dislocation motion; lead compounds; molecular beam epitaxial growth; phonons; semiconductor epitaxial layers; slip; surface morphology; China; IV-VI semiconductor research; Pb-rich atom agglomeration; PbSe; PbTe; Raman spectroscopy; atom agglomeration; atomic force microscopy; epitaxial film; high-resolution x-ray diffraction; lead chalcogenides; mid-infrared luminescent emission; molecular beam epitaxy; monolayer steps; phonon modes; spirals; surface morphologies; threading dislocations; triangle holes; Atomic beams; Atomic force microscopy; Atomic layer deposition; Lead compounds; Molecular beam epitaxial growth; Phonons; Spirals; Surface morphology; Temperature; X-ray diffraction;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368615
