Title :
Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrices
Author :
Shamirzaev, T.S. ; Gilinsky, A.M. ; Toropov, A.I. ; Bakarov, A.K. ; Tenne, D.A. ; Zhuravlev, K.S. ; Schulze, S. ; von Borczyskowski, C. ; Zahn, D.R.T.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
26 June-3 July 2004
Abstract :
Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account an exchange splitting of excitonic levels in the quantum dots.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; excitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; AlGaAs; InAs; excitonic levels; indirect band gap; photoluminescence decay; photoluminescence kinetics; quantum dots; Charge carrier processes; Gallium arsenide; Kinetic theory; Optical device fabrication; Photoluminescence; Photonic band gap; Quantum dots; Radiative recombination; Temperature; US Department of Transportation;
Conference_Titel :
Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8383-4
DOI :
10.1109/KORUS.2004.1555708
