• DocumentCode
    2741075
  • Title

    Room temperature non-vacuum preparation of nanocrystalline CuInSe2 employing aqueous solvents

  • Author

    Exstrom, Christopher L. ; Darveau, Scott A. ; Ingersoll, Matt A. ; Jen, Matthew R. ; Cook, Chelsey ; Slaymaker, Laura E. ; Soukup, Rodney J. ; Ianno, N.J.

  • Author_Institution
    Dept. of Chem., Univ. of Nebraska at Kearney, Kearney, NE, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    A new room-temperature, aqueous solution-based preparation method for chalcopyrite CuInSe2 has been developed. Using 10% aqueous ethylenediamine as a solvent, the slow addition of Cu(NO3)2 to a mixture of indium(III) acetate, elemental Se, and sodium thioglycolate results in the formation of CuInSe2 as characterized by Raman spectroscopy. During this reaction, a kinetically-stable Cu2-xSe(s) intermediate initially forms followed by slow conversion to CuInSe2 that likely involves a direct Cu2-xSe + In2Se3 solid-state reaction. The ethylenediamine in the reaction mixture acts as a complexing agent, establishing equilibria that can be in competition with Cu2-xSe(s) formation, limiting particle size and accelerating rates of reaction with In. Over several hours, the CuInSe2 material undergoes a phase decomposition that can be reversed by annealing at 550 °C. Attempts to prepare CuIn1-xGaxSe2 and CuGaSe2 via this method result primarily in CuInSe2 and Cu2-xSe products, respectively, with nearly all gallium staying in the solution phase.
  • Keywords
    annealing; copper compounds; crystal growth from solution; indium compounds; nanostructured materials; solar absorber-convertors; solutions; CuInSe2; annealing; aqueous solvents; chalcopyrite; ethylenediamine; nanocrystalline preparation; nonvacuum preparation; phase decomposition; temperature 293 K to 298 K; temperature 550 C; Annealing; Barium; Heating; Lead; Limiting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614656
  • Filename
    5614656