DocumentCode :
2741087
Title :
Magnetoresistance and cyclotron mass in extremely-coupled double quantum wells under in-plane magnetic fields
Author :
Blount, M.A. ; Simmons, J.A. ; Lyo, S.K. ; Harff, N.E. ; Weckwerth, M.V.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1997
fDate :
8-11 Sep 1997
Firstpage :
275
Lastpage :
278
Abstract :
We experimentally investigate the transport properties of an extremely-coupled AlGaAs/GaAs double quantum well, subject to in-plane magnetic fields (B||). The coupling of the double quantum well is sufficiently strong that the symmetric-antisymmetric energy gap (ΔSAS) is larger than the Fermi energy (EF). Thus for all B|| only the lower energy branch of the dispersion curve is occupied. In contrast to systems with weaker coupling such that ΔSAS<EF we find: (1) only a single feature, a maximum, in the in-plane magnetoresistance, (2) a monotonic increase with B|| in the cyclotron mass up to 2.2 times the bulk GaAs mass, and (3) an increasing Fermi surface orbit area with B||, in good agreement with theoretical predictions
Keywords :
Fermi level; Fermi surface; III-V semiconductors; aluminium compounds; effective mass; energy gap; gallium arsenide; magnetoresistance; semiconductor quantum wells; AlGaAs-GaAs; Fermi surface orbit area; cyclotron mass; dispersion curve; extremely-coupled double quantum wells; in-plane magnetic fields; magnetoresistance; symmetric-antisymmetric energy gap; Couplings; Cyclotrons; Electrons; Extraterrestrial measurements; Gallium arsenide; Lenses; Magnetic field measurement; Magnetic fields; Magnetic properties; Magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
Type :
conf
DOI :
10.1109/ISCS.1998.711634
Filename :
711634
Link To Document :
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