Title :
Time-resolved photoluminescence of ZnSxSe1-x(0<×<0.12) epilayers on GaAs grown by MBE
Author :
Shin, Eun-joo ; Lee, Joo In ; Kim, Dongho ; Son, Jeong-Sik ; Leem, Jae-Young ; Noh, Sam Kyu ; Lee, Donghan
Author_Institution :
Spectroscopy Lab., Korea Inst. of Stand. & Sci., Taejon, South Korea
Abstract :
We have reported steady-state and time-resolved PL studies of ZnS xSe1-x epilayers grown on GaAs substrate by molecular beam epitaxy with various sulfur compositions around the lattice matching composition (0<x<0.12). We have investigated the PL decay dynamics of ZnSxSe1-x epilayers, and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other lattice-mismatched one. This is interpreted as indicating that the crystalline defects induced by lattice mismatch with the substrate mainly act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers
Keywords :
II-VI semiconductors; III-V semiconductors; crystal defects; gallium arsenide; interface structure; nonradiative transitions; photoluminescence; radiative lifetimes; semiconductor epitaxial layers; time resolved spectra; zinc compounds; GaAs; MBE; PL decay dynamics; PL lifetimes; ZnSxSe1-x; ZnSSe-GaAs; crystalline defects; decay time; epilayers; lattice matching composition; lattice mismatch; molecular beam epitaxy; nonradiative recombination centers; steady-state PL; time-resolved PL; time-resolved photoluminescence; Cities and towns; Excitons; Gallium arsenide; Iron; Laboratories; Laser excitation; Lattices; Molecular beam epitaxial growth; Photoluminescence; Substrates;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711636
