DocumentCode :
2741174
Title :
Terahertz Negative Differential Conductivities in Bulk GaAs
Author :
Zhu, Y.M. ; Sekine, N. ; Unuma, T. ; Hirakawa, K.
Author_Institution :
Univ. of Tokyo, Tokyo
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
413
Lastpage :
413
Abstract :
Intrinsic dynamical conductivity spectra of GaAs have been determined from time-domain terahertz waveforms emitted from undoped bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields. The cutoff frequency for the negative differential conductivities due to intervalley transfer gradually increases with increasing electric field and reaches ~800 GHz at 50 kV/cm. The temperature dependence of the cutoff frequency indicates that it is governed by the energy relaxation process of electrons from the L-to the Gamma-valley via successive optical phonon emission.
Keywords :
III-V semiconductors; gallium arsenide; high-frequency effects; phonon spectra; photoexcitation; submillimetre wave spectra; time resolved spectra; GaAs; energy relaxation process; femtosecond laser pulse; intrinsic dynamical conductivity spectra; optical phonon emission; photoexcitation; terahertz negative differential conductivities; time-domain terahertz waveform; Conductivity; Cutoff frequency; Electron emission; Electron optics; Gallium arsenide; Laser beam cutting; Optical pulses; Temperature dependence; Time domain analysis; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368621
Filename :
4222355
Link To Document :
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