• DocumentCode
    2741201
  • Title

    In Situ Mechanical Characterization of One Dimensional Nanoscale Building Blocks Using Novel Microfabricated Devices

  • Author

    Ganesan, Yogeeswaran ; Lu, Yang ; Lou, Jun ; Lu, Hao

  • Author_Institution
    Dept. of Mech. Eng. & Mater. Sci., Rice Univ., Houston, TX
  • fYear
    2008
  • fDate
    18-21 Aug. 2008
  • Firstpage
    783
  • Lastpage
    786
  • Abstract
    We report the development of simple micro-devices that can be used to perform in situ quantitative nanomechanical characterization of one-dimensional nanoscale building blocks, such as metallic nanowires and carbon nanotubes, within a scanning electron microscope (SEM) or a transmission electron microscope (TEM) chamber equipped with a quantitative nanoindenter. The unique design of these devices makes it possible to convert compression from nanoindentation to uni-axial tension at the sample stages. Fabrication of the micro-devices was carried out on both standard p doped wafers and on silicon on insulator (SOI) wafers using established micro-fabrication processes. Finite element analysis was employed to model the device behavior under mechanical loading in order to ascertain loading parameters. Nanoscratch and in situ nanoindentation experiments were performed in order to obtain the applied force vs. top shuttle displacement curves for the devices. Finally, individual Ni nanowires were picked up, placed and clamped onto the sample stages to act as tensile specimens.
  • Keywords
    carbon nanotubes; indentation; micromechanical devices; nanotechnology; nanowires; scanning electron microscopy; transmission electron microscopy; 1D nanoscale building blocks; SOI wafers; carbon nanotubes; metallic nanowires; microfabricated devices; nanoindentation; nanomechanical characterization; nanoscratch experiment; p doped wafers; scanning electron microscope; silicon on insulator wafers; transmission electron microscope; Carbon nanotubes; Fabrication; Finite element methods; Nanoscale devices; Nanowires; Numerical analysis; Scanning electron microscopy; Semiconductor device modeling; Silicon on insulator technology; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
  • Conference_Location
    Arlington, TX
  • Print_ISBN
    978-1-4244-2103-9
  • Electronic_ISBN
    978-1-4244-2104-6
  • Type

    conf

  • DOI
    10.1109/NANO.2008.234
  • Filename
    4617216