DocumentCode
2741213
Title
Silicon nanowire hybrid photovoltaics
Author
Garnett, Erik C. ; Peters, Craig ; Brongersma, Mark ; Cui, Yi ; McGehee, Mike
Author_Institution
Dept. of Mater. Sci., Stanford Univeristy, Stanford, CA, USA
fYear
2010
fDate
20-25 June 2010
Abstract
Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used.
Keywords
conducting polymers; elemental semiconductors; nanowires; passivation; semiconductor quantum wires; silicon; solar cells; spin coating; Si; n-type silicon nanowire arrays; native oxide surfaces; open circuit voltages; polymer Schottky junction cells; silicon nanowire Schottky junction solar cells; silicon nanowire hybrid photovoltaics; silicon nanowire-PEDOT solar cells; spin coated conductive polymer; standard diffused junction cells; superior surface passivation; Junctions; Passivation; Photovoltaic cells; Polymers; Silicon; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614661
Filename
5614661
Link To Document