• DocumentCode
    2741213
  • Title

    Silicon nanowire hybrid photovoltaics

  • Author

    Garnett, Erik C. ; Peters, Craig ; Brongersma, Mark ; Cui, Yi ; McGehee, Mike

  • Author_Institution
    Dept. of Mater. Sci., Stanford Univeristy, Stanford, CA, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used.
  • Keywords
    conducting polymers; elemental semiconductors; nanowires; passivation; semiconductor quantum wires; silicon; solar cells; spin coating; Si; n-type silicon nanowire arrays; native oxide surfaces; open circuit voltages; polymer Schottky junction cells; silicon nanowire Schottky junction solar cells; silicon nanowire hybrid photovoltaics; silicon nanowire-PEDOT solar cells; spin coated conductive polymer; standard diffused junction cells; superior surface passivation; Junctions; Passivation; Photovoltaic cells; Polymers; Silicon; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614661
  • Filename
    5614661