Title :
Photocapacitance investigation of stoichiometry-dependent deep levels in InP
Author :
Oyama, Yutaka ; Nishizawa, Jun-ichi ; Kim, Kyoon ; Suto, Ken
Author_Institution :
Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan
Abstract :
The photocapacitance measurements under constant capacitance condition is applied to n- and p-type InP crystals prepared by 4h-annealing at 700°C under controlled phosphorus vapor pressure. Samples used are InP bulk crystals grown by the conventional LEC method. Vapour pressure controlled-zone melting grown InP and LPE-grown InP are also investigated. The phosphorus vapor pressure dependence of the deep level density is shown. And the excitation photocapacitance method is also applied to show the precise optical transition mechanism of these deep levels. From these results the defect formation mechanism is discussed in view of the deviation from the stoichiometric composition of InP
Keywords :
III-V semiconductors; annealing; deep levels; defect states; indium compounds; photocapacitance; semiconductor epitaxial layers; stoichiometry; 4 h; 700 C; InP; LPE-grown InP; annealing; constant capacitance condition; deep level density; defect formation mechanism; excitation photocapacitance method; n-type InP crystals; optical transition mechanism; p-type InP crystals; phosphorus vapor pressure dependence; photocapacitance; stoichiometric composition; stoichiometry-dependent deep levels; vapour pressure controlled-zone melting grown InP; Capacitance measurement; Crystals; Diodes; Equations; Impurities; Indium phosphide; Ionization; Pressure control; Temperature control; Voltage;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711640
