• DocumentCode
    2741254
  • Title

    Photoconduction studies on InGaAs HEMTs

  • Author

    Schuermeyer, Fritz ; Cheskis, David ; Goldman, R.S. ; Wieder, H.H.

  • Author_Institution
    Res. & Dev. Center, Wright-Patterson AFB, OH, USA
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    Photoconduction measurements made on In0.53Ga0.47 As channel HEMTs indicate that the threshold energy for photoconduction corresponds to the bandgap of the quantum well and the absorption edge of the substrate. Many interband transitions are observed which can be correlated with the electronic subbands of the quantum well. Strong confinement of photogenerated holes is associated with a large modulation of the HEMT threshold voltage
  • Keywords
    III-V semiconductors; absorption coefficients; energy gap; gallium arsenide; high electron mobility transistors; indium compounds; interface states; photoconductivity; semiconductor device measurement; semiconductor quantum wells; HEMT threshold voltage; In0.53Ga0.47As; In0.53Ga0.47As channel HEMTs; InGaAs HEMTs; absorption edge; bandgap; electronic subbands; interband transitions; modulation; photoconduction studies; photogenerated holes; quantum well; strong confinement; threshold energy; Absorption; Energy measurement; HEMTs; Indium gallium arsenide; MODFETs; Photoconductivity; Photonic band gap; Spectroscopy; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711641
  • Filename
    711641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2741254