Title :
Photoconduction studies on InGaAs HEMTs
Author :
Schuermeyer, Fritz ; Cheskis, David ; Goldman, R.S. ; Wieder, H.H.
Author_Institution :
Res. & Dev. Center, Wright-Patterson AFB, OH, USA
Abstract :
Photoconduction measurements made on In0.53Ga0.47 As channel HEMTs indicate that the threshold energy for photoconduction corresponds to the bandgap of the quantum well and the absorption edge of the substrate. Many interband transitions are observed which can be correlated with the electronic subbands of the quantum well. Strong confinement of photogenerated holes is associated with a large modulation of the HEMT threshold voltage
Keywords :
III-V semiconductors; absorption coefficients; energy gap; gallium arsenide; high electron mobility transistors; indium compounds; interface states; photoconductivity; semiconductor device measurement; semiconductor quantum wells; HEMT threshold voltage; In0.53Ga0.47As; In0.53Ga0.47As channel HEMTs; InGaAs HEMTs; absorption edge; bandgap; electronic subbands; interband transitions; modulation; photoconduction studies; photogenerated holes; quantum well; strong confinement; threshold energy; Absorption; Energy measurement; HEMTs; Indium gallium arsenide; MODFETs; Photoconductivity; Photonic band gap; Spectroscopy; Substrates; Voltage;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711641
