Title :
Implementation of plasticity in MOS synapses
Author :
Card, H.C. ; Moore, W.R.
Author_Institution :
Oxford Univ., UK
Abstract :
Discusses learning, multiplication and other algorithms for a fully-connected artificial neural network in which synaptic weights between neurons are represented by resistances, the output of a neuron producing an analogue voltage Vi (in the range O to +V0 volts) which is a function of a weighted sum of its inputs. The strength or weight Wij of the connections is controlled by the channel conductance of a MOSFET with gate voltage Vc stored on the capacitor. When the synthetic neural circuit produces both +Vj and -Vj, an inhibitory weight may be realized using -Vj. In this way, all weights Wij can be positive. Attention is restricted to excitatory synapses, for specificity; inhibitory synapses may be handled in a similar manner. The weight Wih is adjusted according to a learning algorithm and this has normally been performed off-chip and applied as Vc. To increase/decrease the weight it is necessary to alter the charge on the capacitor
Keywords :
MOS integrated circuits; insulated gate field effect transistors; learning systems; neural nets; MOS synapses; MOSFET; channel conductance; excitatory synapses; fully-connected artificial neural network; inhibitory weight; learning algorithms; multiplication algorithms; plasticity; synaptic weights;
Conference_Titel :
Artificial Neural Networks, 1989., First IEE International Conference on (Conf. Publ. No. 313)
Conference_Location :
London