Hydrogenation effect of InGaP grown on GaAs by molecular beam epitaxy

Author

Kim, M.D. ; Park, H.S. ; Kim, T.I. ; Lee, J.Y. ; Kwon, Y.H. ; Kim, D.Y. ; Cho, H.Y.

Author_Institution

Samsung Adv. Inst. of Technol., Suwon, South Korea

fYear

1997

fDate

8-11 Sep 1997

Firstpage

307

Lastpage

310

Abstract

Hydrogenation effects on the electrical properties of n-type and undoped InGaP epilayers lattice matched to GaAs were investigated. It was found that hydrogenation under proper conditions can result in a Au/n-InGaP Schottky diode with good rectifying characteristics as well as effective defect passivation. These improvement were thought to result from the atomic hydrogen diffusion into InGaP which neutralized Si donors and passivated recombination centers near the surface

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; gold; hydrogen; hydrogenation; indium compounds; molecular beam epitaxial growth; passivation; rectification; semiconductor epitaxial layers; semiconductor growth; silicon; Au-InGaP:H,Si-GaAs; Au/n-InGaP Schottky diode; GaAs; InGaP; atomic hydrogen diffusion; effective defect passivation; electrical properties; hydrogenation effect; lattice matched layer; molecular beam epitaxy; n-type InGaP; neutralized Si donor; passivated recombination centers; rectifying characteristics; surface; undoped InGaP epilayers; Epitaxial growth; Gallium arsenide; Hydrogen; Molecular beam epitaxial growth; Passivation; Plasma chemistry; Plasma measurements; Plasma temperature; Schottky diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711642

Filename

711642