Comparative analysis of PD-SOI active body-biasing circuits

Author

Casu, R. ; Masera, G. ; Piccinini, C. ; Roch, M. Ruo ; Zamboni, M.

Author_Institution

Dept. of Electron., Politecnico di Torino, Italy

fYear

2000

fDate

2000

Firstpage

94

Lastpage

95

Abstract

The body of SOI partially depleted MOSFETs can be biased to control the threshold dynamically. In the dynamic threshold MOSFET (DTMOS) (Assaderaghi et al, 1997), the operation is limited to about V _dd=0.7 V because of the forward bias of the B-D and B-S junctions. Active body-biasing circuits (ABC-SOI) use auxiliary transistors to implement the bias circuitry and to increase the V_dd limit (Chuang et al., 1998; Chung et al., 1997; Gil et al., 1998; Lee et al., 1998). In this paper, previously reported and new ABCs are analyzed. The speed-power trade-off and the delay stability, one of the most peculiar PD problems, are examined in several operating conditions

Keywords

MOS integrated circuits; MOSFET; active networks; circuit simulation; circuit stability; delays; high-speed integrated circuits; logic gates; low-power electronics; silicon-on-insulator; 0.7 V; ABC-SOI; B-D junction; B-S junction; DTMOS; PD-SOI active body-biasing circuits; SOI partially depleted MOSFET body bias; SOI partially depleted MOSFETs; Si-SiO₂; active body-biasing circuits; auxiliary transistors; bias circuitry; delay stability; dynamic threshold MOSFET; dynamic threshold control; forward bias; operating conditions; speed-power trade-off; Circuit simulation; Circuit stability; Circuit testing; Delay; Diodes; Energy consumption; Immune system; Inverters; Stability analysis; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2000 IEEE International

Conference_Location

Wakefield, MA

ISSN

1078-621X

Print_ISBN

0-7803-6389-2

Type

conf

DOI

10.1109/SOI.2000.892786

Filename

892786