Title :
Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
Author :
Hong, M. ; Ren, F. ; Hobson, W.S. ; Kuo, J.M. ; Kwo, J. ; Mannaerts, J.P. ; Lothian, J.R. ; Marcus, M.A. ; Liu, C.T. ; Sergent, A.M. ; Lay, T.S. ; Chen, Y.K.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
This article reviews our recent research efforts on GaAs passivation by the growth of a novel oxide made of Ga2O3 and Gd2O3. The oxide-GaAs interface has a low interfacial state density of 1010 cm-2 eV-1, comparable to that of SiO2-Si interface. A multi-chamber UHV system, including molecular beam epitaxy (MBE) growth chambers, has been used to fabricate Ga2O3(Gd2O3)-GaAs device wafers. The growth of Ga2O3(Gd2O3 ), in combining a conventional ion implantation process, enables us to demonstrate the first enhancement-mode GaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with inversion
Keywords :
III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; interface states; ion implantation; molecular beam epitaxial growth; passivation; Ga2O3(Gd2O3); Ga2O3(Gd2O3)-GaAs; Ga2O3(Gd2O3)-GaAs device wafers; GaAs MOSFETs; GaAs passivation; MBE; enhancement-mode GaAs metal-oxide-semiconductor field-effect-transistors; inversion; ion implantation process; low interfacial state density; molecular beam epitaxy; multi-chamber UHV system; oxide-GaAs interface; Circuits; Epitaxial growth; Gallium arsenide; Ion implantation; MESFETs; MOSFETs; Molecular beam epitaxial growth; Oxidation; Substrates; Surface treatment;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711645
