DocumentCode
2741325
Title
Phase Shift in Far-Infrared/Terahertz Resonant Cavity Enhanced Mirrors
Author
Xu, M. ; Zhang, Y.H. ; Shen, W.Z.
Author_Institution
Shanghai Jiao Tong Univ., Shanghai
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
421
Lastpage
421
Abstract
The undoped/doped GaAs structures have shown successfully in the reflectivity of far-infrared (FIR)/terahertz (THz) resonant cavity enhanced (RCE) mirrors, but failed to yield matched phase shift, which has been obtained under resonance condition by sacrificing the reflectivity. Further increase of reflectivity may be realized by employing Au film on the bottom of the mirror.
Keywords
III-V semiconductors; cavity resonators; gallium arsenide; gold; infrared detectors; mirrors; reflectivity; submillimetre wave detectors; GaAs-Au; far-infrared resonant cavity enhanced mirrors; phase shift; reflectivity characteristic; terahertz resonant cavity enhanced mirrors; Absorption; Detectors; Finite impulse response filter; Gold; Mirrors; Optical films; Physics; Reflectivity; Resonance; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368629
Filename
4222363
Link To Document