DocumentCode :
2741345
Title :
Evaluation of circuit approaches in partially depleted SOI-CMOS
Author :
Das, Koushik K. ; Brown, Richard B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
2000
fDate :
2000
Firstpage :
98
Lastpage :
99
Abstract :
Partially depleted (PD) SOI has a number of nonideal effects due to the floating body: parasitic bipolar action, history dependent threshold voltage and logic delays, and the `kink´ effect. One must design around these effects in digital circuits so as to avoid circuit malfunction. This paper reviews the circuit design issues in PD-SOI CMOS technology. Realistic circuits from our design vehicle, a 32-bit PowerPC fixed-point execution unit, are included in the evaluation of the various circuit design alternatives. HSPICE simulations have been performed using a 0.25 μm SOI process and a bulk process
Keywords :
CMOS digital integrated circuits; SPICE; delays; fixed point arithmetic; integrated circuit design; microprocessor chips; silicon-on-insulator; 0.25 micron; 32 bit; HSPICE simulations; PD SOI; PD-SOI CMOS technology; PowerPC fixed-point execution unit; SOI process; Si-SiO2; bulk process; circuit design; circuit design issues; circuit malfunction; design vehicle; digital circuit design; floating body effects; history dependent logic delays; history dependent threshold voltage; kink effect; nonideal effects; parasitic bipolar action; partially depleted SOI-CMOS; CMOS logic circuits; CMOS technology; Circuit synthesis; Clocks; Delay; Logic circuits; Logic design; Parasitic capacitance; Timing; Vehicle dynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
ISSN :
1078-621X
Print_ISBN :
0-7803-6389-2
Type :
conf
DOI :
10.1109/SOI.2000.892788
Filename :
892788
Link To Document :
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