Analysis of Photoelectric Property and Surface Morphology of Amorphous TiO2 at Different Substrate Temperatures by Sputtering

This paper reports the photoelectric property and surface morphology of amorphous titanium dioxide (TiO₂) made at the different substrate temperatures by RF- sputtering on the glass. Five different temperatures (room temperature, 100degC, 200degC, 300degC and 400degC) are set on the substrate holder. The thicknesses of the film are 100 nm, 300 nm and 500 nm. After preparing amorphous TiO₂ thin film, the surface morphology and the light absorption were examined by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and UV-VIS spectrometer respectively. The amorphous phase starts to transform into clustered morphology at temperature of 200degC that was examined by XRD. The thicker film showed several advantages: (i) the amorphous phase of TiO₂ was easy to form cluster morphology, (ii) the light absorption was increased, (iii) the band gap energy of TiO₂ was lowered (from 3.30 eV to 3.28 eV).