Improved PL intensity of InGaAs/GaAs SQW with a selectively oxidized AlAs layer

Author

Takamori, T. ; Pratt, A.R. ; Kamijoh, T.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1997

fDate

8-11 Sep 1997

Firstpage

333

Lastpage

336

Abstract

Data is presented on room temperature photoluminescence (PL) intensity measurements of InGaAs/GaAs single quantum wells (SQW´s) adjoining a selectively oxidized AlAs layer. A drastic PL intensity reduction was observed for a sample with a direct interface between the GaAs barrier and the oxidized AlAs layer. Samples in which an AlGaAs layer was inserted between the SQW and the AlAs showed no such PL intensity reduction after oxidation provided the thickness of the AlGaAs layer was greater than 20 nm. The results provide important information for the design of oxide based optoelectronic devices operated at room temperature

Keywords

III-V semiconductors; gallium arsenide; indium compounds; oxidation; photoluminescence; semiconductor quantum wells; 293 K; AlAs; AlGaAs; InGaAs-GaAs; oxide based optoelectronic devices; photoluminescence intensity; selectively oxidized AlAs layer; single quantum wells; Gallium arsenide; Indium gallium arsenide; Interference; Optical devices; Optical refraction; Optical variables control; Oxidation; Photoluminescence; Refractive index; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711648

Filename

711648