Title :
Improved PL intensity of InGaAs/GaAs SQW with a selectively oxidized AlAs layer
Author :
Takamori, T. ; Pratt, A.R. ; Kamijoh, T.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Data is presented on room temperature photoluminescence (PL) intensity measurements of InGaAs/GaAs single quantum wells (SQW´s) adjoining a selectively oxidized AlAs layer. A drastic PL intensity reduction was observed for a sample with a direct interface between the GaAs barrier and the oxidized AlAs layer. Samples in which an AlGaAs layer was inserted between the SQW and the AlAs showed no such PL intensity reduction after oxidation provided the thickness of the AlGaAs layer was greater than 20 nm. The results provide important information for the design of oxide based optoelectronic devices operated at room temperature
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; oxidation; photoluminescence; semiconductor quantum wells; 293 K; AlAs; AlGaAs; InGaAs-GaAs; oxide based optoelectronic devices; photoluminescence intensity; selectively oxidized AlAs layer; single quantum wells; Gallium arsenide; Indium gallium arsenide; Interference; Optical devices; Optical refraction; Optical variables control; Oxidation; Photoluminescence; Refractive index; Temperature;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711648
