Focused ion beam assisted ohmic metallizations to p-6H-SiC

Author

Iliadis, A.A. ; Androneseu, S.N. ; Talyansky, V. ; Edinger, K. ; Orloff, J.H. ; Woods, M.C. ; Jones, K.A.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

353

Lastpage

357

Abstract

This work deals with the development of high temperature, low resistance ohmic metallizations to p-type 6H-SiC, using a novel approach of focused ion beam (FIB) surface modification and in-situ direct-write metal deposition for ohmic contact formation without annealing. FIB (Ga) surface modification and in-situ deposition of Pt, Mo and W showed minimum contact resistance values of 1.3×10^-4 Ohm cm ² to 7.3×10^-3 Ohm cm², depending on metal and FIB conditions. These contact resistance values of the direct FIB deposited nonannealed contacts compare well with reported values for conventionally deposited and annealed contacts to SiC. Ex-situ E-beam deposition of Pt on FIB surface-modified and unmodified areas showed a substantial increase (one order of magnitude) in the contact resistance values of the unmodified contacts

Keywords

contact resistance; focused ion beam technology; ohmic contacts; semiconductor device metallisation; semiconductor materials; silicon compounds; surface treatment; FIB surface modification; Mo; Pt; SiC; W; contact resistance; direct FIB deposited nonannealed contacts; focused ion beam assisted ohmic metallizations; in-situ direct-write metal deposition; ohmic contact formation; p-6H-SiC; Annealing; Contact resistance; Doping; Educational institutions; Ion beams; Metallization; Ohmic contacts; Silicon carbide; Surface resistance; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711653

Filename

711653