Annealing temperature dependence of terahertz wave detection by low-temperature-grown-GaAs-based photoconductive antennas gated by 1560 nm optical pulses

Author

Suzuki, M. ; Tonouchi, M. ; Kamakura, M. ; Kadoya, Y. ; Yoshimura, M. ; Takagi, M. ; Takahashi, Y. ; Onduka, S. ; Brahadeeswaran, S. ; Mori, Y. ; Sasaki, T.

Author_Institution

Osaka Univ., Osaka

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

429

Lastpage

429

Abstract

We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600degC. Although the sample annealed at 600degC is most sensitive at frequencies below 1 THz, that annealed at 550degC is superior to others at higher frequencies than 1 THz.

Keywords

III-V semiconductors; annealing; gallium arsenide; optical pulse generation; photoconducting switches; annealing temperature; distance 1560 nm; low-temperature-grown photoconductive switches; optical pulses; photoconductive antennas; temperature 500 degC to 600 degC; terahertz wave detection; Annealing; Detectors; Fiber lasers; Frequency; Optical pulses; Photoconductivity; Pulse measurements; Submillimeter wave technology; Temperature dependence; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368637

Filename

4222371