Title :
The dynamic conductance and transconductance in double-gate (gate-all-round) SOI devices
Author :
Vandooren, A. ; Cristoloveanu, S. ; Colinge, J.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
The output conductance of double-gate SOI transistors (DG-MOSFETs) exhibits a dependence versus frequency. This behavior is shown to be related to the loss mechanism due to capture and emission of carriers by interface traps. The interface trap behavior can be represented by an equivalent capacitance Cit and resistance Rit model. We have shown that the EKV model combined with SILVACO simulations fully accounts for (i) the pinch-off voltage variation with drain voltage, (ii) the effect of the interface trap density on the output conductance (Vandooren et al., 1999), and (iii) the conductance degradation with total radiation dose. This paper investigates the frequency behavior of the output conductance observed in double-gate MOSFETs. We demonstrate that this behavior can be reproduced by including the frequency properties of interface traps in the EKV model
Keywords :
MOSFET; carrier density; electric admittance; electron traps; hole traps; interface states; radiation effects; semiconductor device models; DG-MOSFETs; EKV model; SILVACO simulations; Si-SiO2; carrier capture; carrier emission; conductance degradation; double-gate MOSFETs; double-gate SOI MOSFETs; double-gate SOI devices; double-gate SOI transistors; drain voltage; dynamic conductance; equivalent capacitance/resistance model; frequency dependence; frequency properties; gate-all-round SOI devices; interface trap density; interface traps; loss mechanism; output conductance; pinch-off voltage variation; total radiation dose; transconductance; Analytical models; Capacitance; Cutoff frequency; Degradation; Linear predictive coding; MOSFETs; Photonic band gap; Temperature; Transconductance; Voltage;
Conference_Titel :
SOI Conference, 2000 IEEE International
Conference_Location :
Wakefield, MA
Print_ISBN :
0-7803-6389-2
DOI :
10.1109/SOI.2000.892797
